 |  |  | |
| PartNumber | BUK9611-80E,118 | BUK9611-55A,118 | BUK9611-55A |
| Description | MOSFET TrenchMOS N-Channel | MOSFET N-CH 55V 75A D2PAK | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 75 A | - | - |
| Rds On Drain Source Resistance | 11 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 48.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 182 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 53.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 63.9 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 58.4 ns | - | - |
| Typical Turn On Delay Time | 29.6 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Nexperia |
BUK9611-80E,118 | MOSFET TrenchMOS N-Channel | |
| BUK9611-80E,118 | IGBT Transistors MOSFET TrenchMOS N-Channel | ||
NXP Semiconductors |
BUK9611-55A,118 | MOSFET N-CH 55V 75A D2PAK | |
| BUK9611-80E118 | Now Nexperia BUK9611-80E - Power Field-Effect Transistor, 75A I(D), 80V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK9611-55A | ブランドニューオリジナル |