BUK9614

BUK9614-60E,118 vs BUK9614-55A,118

 
PartNumberBUK9614-60E,118BUK9614-55A,118
DescriptionMOSFET N-channel TrenchMOS logic level FETMOSFET TAPE13 PWR-MOS
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V55 V
Id Continuous Drain Current56 A73 A
Rds On Drain Source Resistance11.5 mOhms13 mOhms
Vgs th Gate Source Threshold Voltage1.7 V-
Vgs Gate Source Voltage15 V10 V
Qg Gate Charge20.5 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation96 W149 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101AEC-Q101
PackagingReelReel
Transistor Type1 N-Channel1 N-Channel
BrandNexperiaNexperia
Fall Time22.9 ns125 ns
Product TypeMOSFETMOSFET
Rise Time22.4 ns152 ns
Factory Pack Quantity800800
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time35.7 ns166 ns
Typical Turn On Delay Time16.9 ns26 ns
Unit Weight0.050406 oz-
Height-4.5 mm
Length-10.3 mm
Width-9.4 mm
Part # Aliases-/T3 BUK9614-55A
メーカー モデル 説明 RFQ
Nexperia
Nexperia
BUK9614-60E,118 MOSFET N-channel TrenchMOS logic level FET
BUK9614-55A,118 MOSFET TAPE13 PWR-MOS
BUK9614-60E,118 MOSFET N-CH 60V 56A D2PAK
BUK9614-55A,118 RF Bipolar Transistors MOSFET TAPE13 PWR-MOS
BUK9614-55A118 Now Nexperia BUK9614-55A Power Field-Effect Transistor, 73A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
BUK9614-55 ブランドニューオリジナル
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