BUL120 stock, BUL120, BUL1203E


PartNumber	BUL1203E	BUL120	BUL1203
Description	Bipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFET
Manufacturer	STMicroelectronics	ST	-
Product Category	Bipolar Transistors - BJT	Transistors (BJT) - Single	-
RoHS	Y	-	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-220-3	-	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	550 V	-	-
Collector Base Voltage VCBO	1.2 kV	-	-
Emitter Base Voltage VEBO	9 V	-	-
Maximum DC Collector Current	5 A	5 A	-
Minimum Operating Temperature	- 65 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	BUL1203E	BUL1203E	-
Height	9.15 mm (Max)	-	-
Length	10.4 mm (Max)	-	-
Packaging	Tube	Tube	-
Width	4.6 mm (Max)	-	-
Brand	STMicroelectronics	-	-
Pd Power Dissipation	100000 mW	-	-
Product Type	BJTs - Bipolar Transistors	-	-
Factory Pack Quantity	1000	-	-
Subcategory	Transistors	-	-
Unit Weight	0.081130 oz	0.081130 oz	-
Package Case	-	TO-220-3	-
Mounting Type	-	Through Hole	-
Supplier Device Package	-	TO-220AB	-
Power Max	-	100W	-
Transistor Type	-	NPN	-
Current Collector Ic Max	-	5A	-
Voltage Collector Emitter Breakdown Max	-	550V	-
DC Current Gain hFE Min Ic Vce	-	9 @ 2A, 5V	-
Vce Saturation Max Ib Ic	-	1.5V @ 1A, 3A	-
Current Collector Cutoff Max	-	100μA	-
Frequency Transition	-	-	-
Pd Power Dissipation	-	100000 mW	-
Collector Emitter Voltage VCEO Max	-	550 V	-
Collector Base Voltage VCBO	-	1.2 kV	-
Emitter Base Voltage VEBO	-	9 V	-
DC Collector Base Gain hfe Min	-	10	-

Search Part Number : "BUL120", Match & Start with "BUL120" - Total : 7

メーカー	モデル	説明
STMicroelectronics	BUL1203E	Bipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFET
	BUL1203E	Bipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFET
	BUL1203EFP	Bipolar Transistors - BJT PWR BIP/S.SIGNAL
	BUL120	ブランドニューオリジナル
	BUL1203	ブランドニューオリジナル
	BUL1203E(E)	ブランドニューオリジナル
	BUL1203E///	ブランドニューオリジナル

BUL120