BULB4

BULB49DT4 vs BULB49D

 
PartNumberBULB49DT4BULB49D
DescriptionBipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSY-
Mounting StyleSMD/SMTSMD/SMT
Package / CaseD2PAK-3-
Transistor PolarityNPNNPN
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max450 V-
Collector Base Voltage VCBO850 V-
Emitter Base Voltage VEBO10 V-
Maximum DC Collector Current5 A5 A
Minimum Operating Temperature- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesBULB49DBULB49D
Height4.6 mm (Max)-
Length10.4 mm (Max)-
PackagingReelReel
Width9.35 mm (Max)-
BrandSTMicroelectronics-
Pd Power Dissipation80000 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity1000-
SubcategoryTransistors-
Unit Weight0.070548 oz0.070548 oz
Package Case-D2PAK
Pd Power Dissipation-80000 mW
Collector Emitter Voltage VCEO Max-450 V
Collector Base Voltage VCBO-850 V
Emitter Base Voltage VEBO-10 V
DC Collector Base Gain hfe Min-10
メーカー モデル 説明 RFQ
STMicroelectronics
STMicroelectronics
BULB49DT4 Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
BULB49DT4 Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transisto
BULB49D ブランドニューオリジナル
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