BUZ111

BUZ111 vs BUZ111S vs BUZ111SE045A

 
PartNumberBUZ111BUZ111SBUZ111SE045A
DescriptionPower Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263ABPower Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer-INF-
Product Category-IC Chips-
メーカー モデル 説明 RFQ
BUZ111SLE3045A Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ111 Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ111S Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
BUZ111SE045A ブランドニューオリジナル
BUZ111SE3045 Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ111SE3045A Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
BUZ111SL MOSFET Transistor, N-Channel, TO-220AB
BUZ111SL-E3045 ブランドニューオリジナル
BUZ111SL-E3045A Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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