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| PartNumber | BUZ31 | BUZ31 E3046 | BUZ31H3046XKSA1 |
| Description | MOSFET N-Ch 200V 14.5A TO220-3 | MOSFET N-Ch 200V 14.5A I2PAK-3 | MOSFET N-Ch 200V 14.5A I2PAK-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | GaN | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
| Id Continuous Drain Current | 14.5 A | 14.5 A | 14.5 A |
| Rds On Drain Source Resistance | 200 mOhms | 200 mOhms | 200 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 95 W | 95 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.4 mm | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 60 ns | 60 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 50 ns | 50 ns | - |
| Factory Pack Quantity | 500 | 500 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 150 ns | 150 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Part # Aliases | BUZ31XK | BUZ31E3046XK | BUZ31 H3046 SP000682994 |
| Unit Weight | 0.211644 oz | 0.084199 oz | 0.073511 oz |
| Tradename | - | - | SIPMOS |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BUZ31 | MOSFET N-Ch 200V 14.5A TO220-3 | |
| BUZ31 E3046 | MOSFET N-Ch 200V 14.5A I2PAK-3 | ||
| BUZ31H3046XKSA1 | MOSFET N-Ch 200V 14.5A I2PAK-3 | ||
| BUZ31L | MOSFET N-Ch 200V 13.5A TO220-3 | ||
Infineon Technologies |
BUZ31 | MOSFET N-CH 200V 14.5A TO220AB | |
| BUZ31 E3045A | MOSFET N-CH 200V 14.5A TO263 | ||
| BUZ31 E3046 | MOSFET N-CH 200V 14.5A TO262-3 | ||
| BUZ31H3046XKSA1 | MOSFET N-CH 200V 14.5A TO262-3 | ||
| BUZ31L | MOSFET N-CH 200V 13.5A TO220AB | ||
| BUZ31L E3044A | MOSFET N-CH 200V 13.5A TO-220 | ||
| BUZ31L H | MOSFET N-CH 200V 13.5A TO220-3 | ||
| BUZ31HXKSA1 | MOSFET N-CH 200V 14.5A TO220-3 | ||
| BUZ31 H3045A | IGBT Transistors MOSFET N-Ch 200V 14.5A D2PAK-2 | ||
| BUZ31 , MAX6482BL33BD3 | ブランドニューオリジナル | ||
| BUZ31 H | MOSFET N-Ch 200V 14.5A TO220FP-3 | ||
| BUZ31 SMD | ブランドニューオリジナル | ||
| BUZ31-E3045A | ブランドニューオリジナル | ||
| BUZ310 | ブランドニューオリジナル | ||
| BUZ312LH | ブランドニューオリジナル | ||
| BUZ314 | ブランドニューオリジナル | ||
| BUZ31A | ブランドニューオリジナル | ||
| BUZ31H | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| BUZ31H3045A | ブランドニューオリジナル | ||
| BUZ31H3045AATMA1 | ブランドニューオリジナル | ||
| BUZ31LH | ブランドニューオリジナル | ||
| BUZ31S | ブランドニューオリジナル | ||
| BUZ31 L3045A | ブランドニューオリジナル | ||
| BUZ312 | ブランドニューオリジナル | ||
| BUZ311 | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | ||
| BUZ31H3046 | Power Transistor N Channel Enhancement 200V 14.5A 3-Pin TO-262 Through Hole - Bulk (Alt: BUZ31H3046) |