CGHV1J02

CGHV1J025D-GP4 vs CGHV1J025 vs CGHV1J025D

 
PartNumberCGHV1J025D-GP4CGHV1J025CGHV1J025D
DescriptionRF JFET Transistors GaN HEMT Die DC-18GHz, 25 WattRF JFET Transistors DC-18GHz 25W GaN Gain@10GHz 17dB
ManufacturerQorvoWolfspeed / CreeWolfspeed / Cree
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
Transistor TypeHEMTHEMTHEMT
TechnologyGaN SiCGaN SiCGaN SiC
Gain20 dB17 dB17 dB
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage50 V--
Vgs Gate Source Breakdown Voltage145 V--
Id Continuous Drain Current2.5 A--
Output Power70 W25 W25 W
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
Pd Power Dissipation64 W--
Mounting StyleScrew MountSMD/SMTSMD/SMT
Package / CaseNI-360--
PackagingTrayGel PackGel Pack
ConfigurationSingle--
Operating Frequency3.7 GHz10 MHz to 18 GHz10 MHz to 18 GHz
Operating Temperature Range- 40 C to + 85 C--
SeriesQPD--
BrandQorvo--
Development KitQPD1015LPCB401--
Product TypeRF JFET Transistors--
Factory Pack Quantity25--
SubcategoryTransistors--
Vgs th Gate Source Threshold Voltage- 2.8 V--
Package Case-Bare DieBare Die
Class---
Pd Power Dissipation---
Application---
Id Continuous Drain Current-2 A2 A
Vds Drain Source Breakdown Voltage-100 V100 V
Vgs th Gate Source Threshold Voltage-- 3V- 3V
Rds On Drain Source Resistance-0.6 Ohms0.6 Ohms
Forward Transconductance Min---
Vgs Gate Source Breakdown Voltage-- 10 V to + 2 V- 10 V to + 2 V
Gate Source Cutoff Voltage---
Maximum Drain Gate Voltage---
NF Noise Figure---
P1dB Compression Point---
メーカー モデル 説明 RFQ
N/A
N/A
CGHV1J025D-GP4 RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt
CGHV1J025D-GP4 RF POWER TRANSISTOR
CGHV1J025 ブランドニューオリジナル
CGHV1J025D RF JFET Transistors DC-18GHz 25W GaN Gain@10GHz 17dB
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