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| PartNumber | CSD16323Q3 | CSD16323Q3C | CSD16323 |
| Description | MOSFET N-Ch NexFET Pwr MOSFET | MOSFET Dual Cool NCh NexFET Power MOSFET | |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | E | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | VSON-Clip-8 | VSON-Clip-8 | - |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 60 A | 60 A | - |
| Rds On Drain Source Resistance | 4.5 mOhms | 5.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | 1.1 V | - |
| Vgs Gate Source Voltage | 8 V | 10 V | - |
| Qg Gate Charge | 6.2 nC | 6.2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 74 W | 3 W | - |
| Configuration | Single | Dual | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Height | 1 mm | 1.1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | CSD16323Q3 | CSD16323Q3C | NexFET |
| Transistor Type | 1 N-Channel Power MOSFET | 2 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Texas Instruments | Texas Instruments | - |
| Fall Time | 6.3 ns | - | 6.3 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15 ns | - | 15 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 13 ns | - | 13 ns |
| Typical Turn On Delay Time | 5.3 ns | - | 5.3 ns |
| Unit Weight | 0.001541 oz | 0.001623 oz | - |
| Forward Transconductance Min | - | 108 S | - |
| Package Case | - | - | 8-PowerTDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-VSON (3.3x3.3) |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 3W |
| Drain to Source Voltage Vdss | - | - | 25V |
| Input Capacitance Ciss Vds | - | - | 1300pF @ 12.5V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 21A (Ta), 60A (Tc) |
| Rds On Max Id Vgs | - | - | 4.5 mOhm @ 24A, 8V |
| Vgs th Max Id | - | - | 1.4V @ 250μA |
| Gate Charge Qg Vgs | - | - | 8.4nC @ 4.5V |
| Pd Power Dissipation | - | - | 3 W |
| Vgs Gate Source Voltage | - | - | 10 V |
| Id Continuous Drain Current | - | - | 21 A |
| Vds Drain Source Breakdown Voltage | - | - | 25 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.1 V |
| Rds On Drain Source Resistance | - | - | 4.4 mOhms |
| Qg Gate Charge | - | - | 6.2 nC |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Texas Instruments |
CSD16323Q3 | MOSFET N-Ch NexFET Pwr MOSFET | |
| CSD16323Q3C | MOSFET Dual Cool NCh NexFET Power MOSFET | ||
| CSD16323 | ブランドニューオリジナル | ||
| CSD16323Q3C | MOSFET N-CH 25V 60A 8SON | ||
| CSD16323Q3 | MOSFET N-CH 25V 3.3X3.3 8-SON |