 |  | | |
| PartNumber | CSD17308Q3 | CSD17308 | CSD17308Q3 , SMP1320-004 |
| Description | MOSFET 30V NCh NexFET Pwr MOSFET | ||
| Manufacturer | Texas Instruments | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VSON-Clip-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 10.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 3.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 28 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | NexFET | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | CSD17308Q3 | - | - |
| Transistor Type | 1 N-Channel Power MOSFET | - | - |
| Width | 3.3 mm | - | - |
| Brand | Texas Instruments | - | - |
| Development Kit | BQ500211AEVM-210 | - | - |
| Fall Time | 2.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.7 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 9.9 ns | - | - |
| Typical Turn On Delay Time | 4.5 ns | - | - |
| Unit Weight | 0.001446 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Texas Instruments |
CSD17308Q3 | MOSFET 30V NCh NexFET Pwr MOSFET | |
| CSD17308Q3T | MOSFET 30V, N ch NexFET MOSFETG , single SON3x3, 11.8mOhm 8-VSON-CLIP -55 to 150 | ||
| CSD17308 | ブランドニューオリジナル | ||
| CSD17308Q3 , SMP1320-004 | ブランドニューオリジナル | ||
| CSD17308Q3 G4 | ブランドニューオリジナル | ||
| CSD17308Q3SON-8 | ブランドニューオリジナル | ||
| CSD17308Q3T | MOSFET N-CH 30V 50A | ||
| CSD17308Q3 | MOSFET N-CH 30V 47A 8SON |