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| PartNumber | CYT5551D TR | CYT5551HCD | CYT5551D |
| Description | Bipolar Transistors - BJT Small Signal Dual NPN Hi Volt | Bipolar Transistors - BJT Small Signal Dual NPN Hi Volt | |
| Manufacturer | - | - | Central Semiconductor |
| Product Category | - | - | Transistors - Bipolar (BJT) - RF |
| Series | - | - | CYT5551 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | TR |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOT-228 |
| Configuration | - | - | Dual |
| Pd Power Dissipation | - | - | 2 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 65 C |
| Collector Emitter Voltage VCEO Max | - | - | 160 V |
| Transistor Polarity | - | - | NPN |
| Collector Emitter Saturation Voltage | - | - | 200 mV |
| Collector Base Voltage VCBO | - | - | 180 V |
| Emitter Base Voltage VEBO | - | - | 6 V |
| Maximum DC Collector Current | - | - | 600 mA |
| Gain Bandwidth Product fT | - | - | 300 MHz |
| Continuous Collector Current | - | - | 600 mA |
| DC Collector Base Gain hfe Min | - | - | 30 at 50 mA 5 V |
| DC Current Gain hFE Max | - | - | 250 |