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| PartNumber | DF400R12KE3 | DF400R07PE4RB6BOSA1 | DF400R07PE4R_B6 |
| Description | IGBT Modules N-CH 1.2KV 580A | Insulated Gate Bipolar Transisto | IGBT Modules |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | IGBT Modules | - | IGBTs - Modules |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Continuous Collector Current at 25 C | 580 A | - | - |
| Package / Case | 62 mm | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 30.5 mm | - | - |
| Length | 106.4 mm | - | - |
| Width | 61.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | DF400R12KE3HOSA1 SP000100792 | - | - |
| Part Aliases | - | - | SP000986082 |