 |  | | |
| PartNumber | DMB53D0UV-7 | DMB53D0UV-7 , VS26VUA1LA | DMB53D0UV-7-F |
| Description | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | ||
| Manufacturer | Diodes Incorporated | - | DIODES |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel, NPN | - | - |
| Vds Drain Source Breakdown Voltage | 50 V | - | - |
| Id Continuous Drain Current | 160 mA | - | - |
| Rds On Drain Source Resistance | 3.1 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 700 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMB53D | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 180 mS | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.000106 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMB53D0UV-7 | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | |
| DMB53D0UV-7 | IGBT Transistors MOSFET N-CHANNEL NPN ENHANCEMENT MODE | ||
| DMB53D0UV-7 , VS26VUA1LA | ブランドニューオリジナル | ||
| DMB53D0UV-7-F | ブランドニューオリジナル |