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| PartNumber | DMG4468LK3-13 | DMG4468LK3 | DMG4468LK313 |
| Description | MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Manufacturer | Diodes Incorporated | DIODES | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 9.7 A | - | - |
| Rds On Drain Source Resistance | 11 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.05 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18.85 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.68 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG4468 | DMG4468 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 8 S | - | - |
| Fall Time | 6.01 ns | 6.01 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14.53 ns | 14.53 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18.84 ns | 18.84 ns | - |
| Typical Turn On Delay Time | 5.46 ns | 5.46 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 1.68 W | - |
| Id Continuous Drain Current | - | 9.7 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 11 mOhms | - |
| Qg Gate Charge | - | 18.85 nC | - |
| Forward Transconductance Min | - | 8 S | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG4468LK3-13 | MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A | |
| DMG4468LK3 | ブランドニューオリジナル | ||
| DMG4468LK313 | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| DMG4468LK3-13 | IGBT Transistors MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A |