DMN102

DMN1025UFDB-7 vs DMN1023UCB4-7 vs DMN1029UFDB-13

 
PartNumberDMN1025UFDB-7DMN1023UCB4-7DMN1029UFDB-13
DescriptionMOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7WMOSFET MOSFET BVDSS: 8V-24VMOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseU-DFN2020-B-6U-WLB1010-4U-DFN2020-B-6
Number of Channels2 Channel1 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage12 V12 V-
Id Continuous Drain Current6.9 A5.1 A-
Rds On Drain Source Resistance25 mOhms, 25 mOhms23 mOhms-
Vgs th Gate Source Threshold Voltage1 V0.4 V-
Vgs Gate Source Voltage10 V8 V-
Qg Gate Charge12.6 nC3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.7 W1.2 W-
ConfigurationDualSingleDual
Channel ModeEnhancementEnhancement-
PackagingReelReelReel
SeriesDMN1025-DMN1029
Transistor Type2 N-Channel1 N-Channel2 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min-8 S-
Fall Time2.8 ns9 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time9.3 ns6 ns-
Factory Pack Quantity3000300010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time17.2 ns18 ns-
Typical Turn On Delay Time3 ns3 ns-
Unit Weight--0.000238 oz
メーカー モデル 説明 RFQ
Diodes Incorporated
Diodes Incorporated
DMN1029UFDB-7 MOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC
DMN1025UFDB-7 MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W
DMN1023UCB4-7 MOSFET MOSFET BVDSS: 8V-24V
DMN1029UFDB-13 MOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC
DMN1025UFDB ブランドニューオリジナル
DMN1025UFDB-7 Dual N-Channel Enhancement Mode MOSFET
DMN1029UFDB-7 Trans MOSFET N-CH 12V 5.6A 6-Pin UDFN EP T/R
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