 | |  | |
| PartNumber | DMN10H220LVT-7 | DMN10H220LVT-13 | DMN10H400SK3-13 |
| Description | MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs | MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOT-26-6 | TSOT-26-6 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 2.24 A | - | - |
| Rds On Drain Source Resistance | 250 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 8.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.67 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Series | DMN10 | DMN10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 3.6 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8.2 ns | - | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 7.9 ns | - | - |
| Typical Turn On Delay Time | 6.8 ns | - | - |
| Unit Weight | - | 0.000459 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN10H220LVT-7 | MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs | |
| DMN10H220LVT-13 | MOSFET 100V N-Ch Enh FET 220mOhm 16Vgs | ||
| DMN10H700S-7 | MOSFET MOSFET BVDSS: 61V-100V | ||
| DMN10H400SK3-13 | ブランドニューオリジナル | ||
| DMN10H700S-7 | MOSFET N-CHA 100V 700MA SOT23 |