 |  | ||
| PartNumber | DMN10H100SK3-13 | DMN10H120SFG-13 | DMN10H120SE-13 |
| Description | MOSFET 100V N-Ch Enh FET 100mOhm 3V | MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF | MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | PowerDI3333-8 | SOT-223-4 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 18 A | 3.8 A | 3.6 A |
| Rds On Drain Source Resistance | 100 mOhms | 68 mOhms | 110 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
| Qg Gate Charge | 25.2 nC | 10.6 nC | 10 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 37 W | 1 W | 2.1 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | DMN10 | D0H120 | DMN10 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 7.3 ns | 2.5 ns | 2.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5.9 ns | 1.8 ns | 1.8 ns |
| Factory Pack Quantity | 2500 | 3000 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 11.5 ns | 11 ns |
| Typical Turn On Delay Time | 5.4 ns | 3.8 ns | 3.8 ns |
| Unit Weight | 0.139332 oz | - | 0.003951 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN10H100SK3-13 | MOSFET 100V N-Ch Enh FET 100mOhm 3V | |
| DMN10H170SK3-13 | MOSFET 100V N-CH MOSFET 100V 12A | ||
| DMN10H170SVT-7 | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | ||
| DMN10H120SFG-13 | MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF | ||
| DMN10H170SFDE-7 | MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W | ||
| DMN10H170SFG-7 | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | ||
| DMN10H120SE-13 | MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC | ||
| DMN10H120SFG-7 | MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF | ||
| DMN10H170SFGQ-7 | MOSFET MOSFET BVDSS: 61V-100V | ||
| DMN10H170SFG-13 | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | ||
| DMN10H170SVTQ-13 | MOSFET MOSFET BVDSS | ||
| DMN10H170SVT-13 | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | ||
| DMN10H170SFDE-13 | MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W | ||
| DMN10H170SFGQ-13 | MOSFET MOSFET BVDSS: 61V-100V | ||
| DMN10H100SK3-13 | MOSFET N-CH 100V 18A TO252 | ||
| DMN10H120SE | ブランドニューオリジナル | ||
| DMN10H120SFG | ブランドニューオリジナル | ||
| DMN10H170SFG | ブランドニューオリジナル | ||
| DMN10H170SK3 | ブランドニューオリジナル | ||
| DMN10H170SK3-13-79 | ブランドニューオリジナル | ||
| DMN10H170SVT | ブランドニューオリジナル | ||
| DMN10H120SE-13 | Darlington Transistors MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC | ||
| DMN10H170SK3-13 | Darlington Transistors MOSFET 100V N-CH MOSFET 100V 12A | ||
| DMN10H170SVT-13 | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | ||
| DMN10H170SFDE-13 | MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W | ||
| DMN10H170SFG-13 | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | ||
| DMN10H170SVT-7 | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | ||
| DMN10H120SFG-7 | MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF | ||
| DMN10H170SFDE-7 | MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W | ||
| DMN10H170SFG-7 | MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss | ||
| DMN10H120SFG-13 | MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF |