 |  | | |
| PartNumber | DMN2016UTS-13 | DMN2016UTS | DMN2016UTS-13-CUT TAPE |
| Description | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSSOP-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 8.58 A | - | - |
| Rds On Drain Source Resistance | 16.5 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 880 mW | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMN2016 | DMN2016 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 16.27 ns | 16.27 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11.66 ns | 11.66 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 59.38 ns | 59.38 ns | - |
| Typical Turn On Delay Time | 10.39 ns | 10.39 ns | - |
| Unit Weight | 0.005573 oz | 0.005573 oz | - |
| Package Case | - | 8-TSSOP (0.173", 4.40mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-TSSOP | - |
| FET Type | - | 2 N-Channel (Dual) Common Drain | - |
| Power Max | - | 880mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 1495pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 8.58A | - |
| Rds On Max Id Vgs | - | 14.5 mOhm @ 9.4A, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 16.5nC @ 4.5V | - |
| Pd Power Dissipation | - | 880 mW | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 8.58 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 16.5 mOhms | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN2016UTS-13 | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | |
| DMN2016UTS | ブランドニューオリジナル | ||
| DMN2016UTS-13 | Trans MOSFET N-CH 20V 5.58A Automotive 8-Pin TSSOP T/R | ||
| DMN2016UTS-13-CUT TAPE | ブランドニューオリジナル |