DMN4026S

DMN4026SSDQ-13 vs DMN4026SSD-13 vs DMN4026SK3-13

 
PartNumberDMN4026SSDQ-13DMN4026SSD-13DMN4026SK3-13
DescriptionMOSFET N-Ch Enh Mode FET 40Vdss 20VgssMOSFET N-Ch Enh Mode FET 40Vdss 20VgssMOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8SO-8TO-252-3
Number of Channels2 Channel2 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
ConfigurationDualDualSingle
QualificationAEC-Q101--
PackagingReelReelReel
SeriesDMN40DMN40DMN40
Transistor Type2 N-Channel2 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.002610 oz0.002610 oz0.139332 oz
Vds Drain Source Breakdown Voltage-40 V40 V
Id Continuous Drain Current-7 A28 A
Rds On Drain Source Resistance-20 mOhms20 mOhms
Vgs th Gate Source Threshold Voltage-3 V1 V
Vgs Gate Source Voltage-20 V20 V
Qg Gate Charge-19.1 nC9.6 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-1.8 W3.4 W
Channel Mode-EnhancementEnhancement
Fall Time-4.8 ns3.1 ns
Rise Time-7.1 ns4.6 ns
Typical Turn Off Delay Time-15.1 ns19.5 ns
Typical Turn On Delay Time-5.3 ns4.3 ns
メーカー モデル 説明 RFQ
Diodes Incorporated
Diodes Incorporated
DMN4026SSDQ-13 MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss
DMN4026SSD-13 MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss
DMN4026SK3-13 MOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF
DMN4026SSD-13 MOSFET 2N-CH 40V 7A 8SO
DMN4026SK3-13 IGBT Transistors MOSFET 40V N-Ch Enh FET 20Vgss 1.6W 1181pF
DMN4026SSDQ-13 MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss
DMN4026SSD-13-F ブランドニューオリジナル
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