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| PartNumber | DMN6068SE-13 | DMN6068SE | DMN6068SE-1 |
| Description | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | MOSFET, N CHANNEL, DIODE, 60V, 4.1A, SOT223, Transistor Polarity:N Channel, Continuous Drain Current Id:5.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.068ohm, Rds(on) Test Voltage Vg | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 5.6 A | - | - |
| Rds On Drain Source Resistance | 68 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 10.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
| Series | DMN6068 | DMN6068 | DMN6068 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 19.7 S | - | - |
| Fall Time | 8.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10.8 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11.9 ns | 11.9 ns | 11.9 ns |
| Typical Turn On Delay Time | 3.6 ns | 3.6 ns | 3.6 ns |
| Unit Weight | 0.003951 oz | 0.000282 oz | 0.000282 oz |
| Package Case | - | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | SOT-223 | SOT-223 |
| FET Type | - | MOSFET N-Channel, Metal Oxide | MOSFET N-Channel, Metal Oxide |
| Power Max | - | 2W | 2W |
| Drain to Source Voltage Vdss | - | 60V | 60V |
| Input Capacitance Ciss Vds | - | 502pF @ 30V | 502pF @ 30V |
| FET Feature | - | Standard | Standard |
| Current Continuous Drain Id 25°C | - | 4.1A (Ta) | 4.1A (Ta) |
| Rds On Max Id Vgs | - | 68 mOhm @ 12A, 10V | 68 mOhm @ 12A, 10V |
| Vgs th Max Id | - | 3V @ 250μA | 3V @ 250μA |
| Gate Charge Qg Vgs | - | 10.3nC @ 10V | 10.3nC @ 10V |
| Pd Power Dissipation | - | 16 W | 16 W |
| Id Continuous Drain Current | - | 5.6 A | 5.6 A |
| Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
| Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
| Rds On Drain Source Resistance | - | 68 mOhms | 68 mOhms |
| Qg Gate Charge | - | 10.3 nC | 10.3 nC |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN6068SEQ-13 | MOSFET MOSFET BVDSS 41V-60V | |
| DMN6068SE-13 | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | ||
| DMN6068SE | MOSFET, N CHANNEL, DIODE, 60V, 4.1A, SOT223, Transistor Polarity:N Channel, Continuous Drain Current Id:5.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.068ohm, Rds(on) Test Voltage Vg | ||
| DMN6068SE-1 | ブランドニューオリジナル | ||
| DMN6068SE-13DKR-ND | ブランドニューオリジナル | ||
| DMN6068SE-13-CUT TAPE | ブランドニューオリジナル | ||
| DMN6068SEQ-13 | MOSFET BVDSS: 41V~60V SOT223 T&R 4K - Tape and Reel (Alt: DMN6068SEQ-13) | ||
| DMN6068SEQ-13-CUT TAPE | ブランドニューオリジナル | ||
| DMN6068SE-13 | Darlington Transistors MOSFET ENHANCE MODE MOSFET 60V N-CHAN |