DMN6075

DMN6075S-7 vs DMN6075S-13 vs DMN6075S-7-CUT TAPE

 
PartNumberDMN6075S-7DMN6075S-13DMN6075S-7-CUT TAPE
DescriptionMOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pFMOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current2.5 A2.5 A-
Rds On Drain Source Resistance85 mOhms120 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge12.3 nC12.3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.15 W1.15 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1 mm1 mm-
Length3 mm3 mm-
ProductEnhancement Mode MOSFETEnhancement Mode MOSFET-
SeriesDMN60DMN60-
Transistor Type1 N-Channel1 N-Channel-
TypeEnhancement Mode MOSFETEnhancement Mode MOSFET-
Width1.4 mm1.4 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time11 ns11 ns-
Product TypeMOSFETMOSFET-
Rise Time4.1 ns4.1 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time35 ns35 ns-
Typical Turn On Delay Time3.5 ns3.5 ns-
Unit Weight0.000282 oz0.000282 oz-
Forward Transconductance Min---
メーカー モデル 説明 RFQ
Diodes Incorporated
Diodes Incorporated
DMN6075S-7 MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
DMN6075S-13 MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
DMN6075S-7-F ブランドニューオリジナル
DMN6075S-7-CUT TAPE ブランドニューオリジナル
DMN6075S-7 IGBT Transistors MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
DMN6075S-13 MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
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