DMN60H stock, DMN60H, DMN60H080DS-7


PartNumber	DMN60H080DS-7	DMN60H080DS-13	DMN60H3D5SK3-13
Description	MOSFET MOSFETBVDSS: 501V-650V	MOSFET MOSFETBVDSS: 501V-650V	MOSFET MOSFET BVDSS: 501V-650V
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	-
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-23-3	SOT-23-3	TO-252-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V	600 V
Id Continuous Drain Current	80 mA	80 mA	2.8 A
Rds On Drain Source Resistance	100 Ohms	67 Ohms	2.7 Ohms
Vgs th Gate Source Threshold Voltage	1.5 V	1.5 V	2 V
Vgs Gate Source Voltage	10 V	20 V	30 V
Qg Gate Charge	1.7 nC	1.7 nC	12.6 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	1.1 W	1.1 W	41 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Reel	Reel	Reel
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Brand	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Forward Transconductance Min	76 mS	76 ms	-
Fall Time	158 ns	158 ns	28 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	10 ns	10 ns	22 ns
Factory Pack Quantity	3000	10000	2500
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	21 ns	21 ns	34 ns
Typical Turn On Delay Time	7 ns	7 ns	10.6 ns
Unit Weight	0.000282 oz	0.000282 oz	0.011993 oz

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DMN60H