DMN63D8LDW-7

DMN63D8LDW-7-F vs DMN63D8LDW-7-CUT TAPE vs DMN63D8LDW-7

 
PartNumberDMN63D8LDW-7-FDMN63D8LDW-7-CUT TAPEDMN63D8LDW-7
DescriptionTrans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R
Manufacturer--Diodes Incorporated
Product Category--FETs - Arrays
Series--DMN63D8
Packaging--Digi-ReelR Alternate Packaging
Unit Weight--0.000212 oz
Mounting Style--SMD/SMT
Package Case--6-TSSOP, SC-88, SOT-363
Technology--Si
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Number of Channels--2 Channel
Supplier Device Package--SOT-363
Configuration--Dual
FET Type--2 N-Channel (Dual)
Power Max--300mW
Transistor Type--2 N-Channel
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--22pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--220mA
Rds On Max Id Vgs--2.8 Ohm @ 250mA, 10V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--870nC @ 10V
Pd Power Dissipation--300 mW
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--6.3 ns
Rise Time--3.2 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--260 mA
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--1.5 V
Rds On Drain Source Resistance--2.8 Ohms
Transistor Polarity--N-Channel
Typical Turn Off Delay Time--12 ns
Typical Turn On Delay Time--3.3 ns
Qg Gate Charge--0.87 nC
Forward Transconductance Min--80 mS
Channel Mode--Enhancement
メーカー モデル 説明 RFQ
DMN63D8LDW-7-F ブランドニューオリジナル
DMN63D8LDW-7-CUT TAPE ブランドニューオリジナル
DMN63D8LDW-7 Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R
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