DMN65D8LDW

DMN65D8LDW-7 vs DMN65D8LDWQ-7 vs DMN65D8LDWQ-13

 
PartNumberDMN65D8LDW-7DMN65D8LDWQ-7DMN65D8LDWQ-13
DescriptionMOSFET Dual N-Ch 60V 8ohm 5V VGS 170mAMOSFET 60V N-Ch Dual Enh 20Vgss 300mW PdMOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-363-6SOT-363-6SOT-363-6
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance6 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge870 pC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation400 mW--
ConfigurationDualDualDual
Channel ModeEnhancement--
PackagingReelReelReel
SeriesDMN63DMN65DDMN65D
Transistor Type2 N-Channel2 N-Channel2 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min80 mS--
Fall Time6.3 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time3.2 ns--
Factory Pack Quantity3000300010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time3.3 ns--
Unit Weight0.000212 oz0.000265 oz0.000265 oz
Qualification-AEC-Q101AEC-Q101
メーカー モデル 説明 RFQ
Diodes Incorporated
Diodes Incorporated
DMN65D8LDW-7 MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
DMN65D8LDWQ-7 MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
DMN65D8LDWQ-13 MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
DMN65D8LDWQ-7 MOSFET 2N-CH 60V 180MA SOT363
DMN65D8LDW-7 Darlington Transistors MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
DMN65D8LDW ブランドニューオリジナル
DMN65D8LDW-7-F ブランドニューオリジナル
DMN65D8LDWQ ブランドニューオリジナル
DMN65D8LDW-7-CUT TAPE ブランドニューオリジナル
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