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| PartNumber | DMP2100UFU-13 | DMP2100U-7 | DMP2100UCB9-7 |
| Description | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W | MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K | |
| Manufacturer | Diodes Incorporated | DIODES | Diodes Incorporated |
| Product Category | MOSFET | FETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | U-DFN2030-6 | - | - |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Configuration | Dual | Single | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
| Series | DMP2100 | DMP2100 | DMP2100 |
| Transistor Type | 2 P-Channel | 1 P-Channel | 1 P-Channel |
| Brand | Diodes Incorporated | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.000423 oz | 0.000282 oz | - |
| Package Case | - | TO-236-3, SC-59, SOT-23-3 | 9-UFBGA, WLBGA |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | SOT-23 | U-WLB1515-9 |
| FET Type | - | MOSFET P-Channel, Metal Oxide | 2 P-Channel (Dual) Common Source |
| Power Max | - | 800mW | 800mW |
| Drain to Source Voltage Vdss | - | 20V | 20V |
| Input Capacitance Ciss Vds | - | 216pF @ 15V | 310pF @ 10V |
| FET Feature | - | Standard | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | 4.3A (Ta) | 3A |
| Rds On Max Id Vgs | - | 38 mOhm @ 3.5A, 10V | 100 mOhm @ 1A, 4.5V |
| Vgs th Max Id | - | 1.4V @ 250μA | 900mV @ 250μA |
| Gate Charge Qg Vgs | - | 9.1nC @ 4.5V | 4.2nC @ 4.5V |
| Pd Power Dissipation | - | 800 mW | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 423 ns | - |
| Rise Time | - | 155 ns | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | - 4.3 A | 3 A |
| Vds Drain Source Breakdown Voltage | - | - 20 V | 20 V |
| Vgs th Gate Source Threshold Voltage | - | - 1.4 V | - |
| Rds On Drain Source Resistance | - | 38 mOhms | 175 mOhms |
| Typical Turn Off Delay Time | - | 688 ns | - |
| Typical Turn On Delay Time | - | 80 ns | - |
| Qg Gate Charge | - | 9.1 nC | - |
| Forward Transconductance Min | - | 3 S | - |
| Channel Mode | - | Enhancement | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMP2100UFU-13 | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W | |
| DMP2100U-7 | ブランドニューオリジナル | ||
| DMP2100UFU-7 | MOSFET 2P-CH 20V U-DFN2030-6 | ||
| DMP2100UCB9-7 | MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K | ||
| DMP2100U-7-F , MAX6419UK | ブランドニューオリジナル | ||
| DMP2100UFU | ブランドニューオリジナル | ||
| DMP2100UQ-7 | Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R | ||
| DMP2100U-7-CUT TAPE | ブランドニューオリジナル |