| PartNumber | DMP6110SFDF-13 | DMP6110SFDFQ-7 | DMP6110SFDFQ-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 31V-40V | MOSFET MOSFET BVDSS: 31V-40V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Package / Case | U-DFN2020-6 | U-DFN2020-6 | U-DFN2020-6 |
| Packaging | Reel | Reel | Reel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 10000 | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.000247 oz | - | - |
| RoHS | - | Y | Y |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
| Id Continuous Drain Current | - | 4.2 A | 4.2 A |
| Rds On Drain Source Resistance | - | 130 mOhms | 130 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1 V | 1 V |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 17.2 nC | 17.2 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 1.97 W | 1.97 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Qualification | - | AEC-Q101 | AEC-Q101 |
| Transistor Type | - | 1 P-Channel | 1 P-Channel |
| Fall Time | - | 42 ns | 42 ns |
| Rise Time | - | 23 ns | 23 ns |
| Typical Turn Off Delay Time | - | 34 ns | 34 ns |
| Typical Turn On Delay Time | - | 4.4 ns | 4.4 ns |