 | |  | |
| PartNumber | DMTH10H025LK3-13 | DMTH10H025LK3Q-13 | DMTH10H025LK3Q |
| Description | MOSFET MOSFET BVDSS: 61V-100V | MOSFET MOSFET BVDSS: 61V-100V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 51.7 A | 51.7 A | - |
| Rds On Drain Source Resistance | 22 mOhms | 22 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 21 nC | 21 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 100 W | 100 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMTH10H025 | DMTH10H025 | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 8.2 ns | 8.2 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9.4 ns | 9.4 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 16.7 ns | 16.7 ns | - |
| Typical Turn On Delay Time | 6.3 ns | 6.3 ns | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |
| Qualification | - | AEC-Q101 | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMTH10H025LK3-13 | MOSFET MOSFET BVDSS: 61V-100V | |
| DMTH10H025LK3Q-13 | MOSFET MOSFET BVDSS: 61V-100V | ||
| DMTH10H025LK3-13 | MOSFET BVDSS: 61V100V TO252 T&R 2.5K | ||
| DMTH10H025LK3Q | ブランドニューオリジナル |