DMTH4

DMTH43M8LFG-7 vs DMTH43M8LFGQ-7 vs DMTH43M8LFGQ-13

 
PartNumberDMTH43M8LFG-7DMTH43M8LFGQ-7DMTH43M8LFGQ-13
DescriptionMOSFET MOSFET BVDSS: 31V-40VMOSFET MOSFET BVDSS 31V40VMOSFET MOSFET BVDSS 31V-40V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V40 V
Id Continuous Drain Current100 A100 A100 A
Rds On Drain Source Resistance6 mOhms3 mOhms3 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge40.1 nC40.1 nC40.1 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation65.2 W65.2 W65.2 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time12.4 ns12.4 ns12.4 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time10.7 ns10.7 ns10.7 ns
Factory Pack Quantity200020003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time24.6 ns24.6 ns24.6 ns
Typical Turn On Delay Time5.16 ns5.16 ns5.16 ns
Qualification-AEC-Q101AEC-Q101
メーカー モデル 説明 RFQ
Diodes Incorporated
Diodes Incorporated
DMTH43M8LPS-13 MOSFET MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K
DMTH43M8LPSQ-13 MOSFET MOSFET BVDSS: 31V-40V
DMTH43M8LK3Q-13 MOSFET MOSFETBVDSS: 31V-40V
DMTH43M8LK3-13 MOSFET MOSFETBVDSS: 31V-40V
DMTH43M8LFG-7 MOSFET MOSFET BVDSS: 31V-40V
DMTH43M8LFGQ-7 MOSFET MOSFET BVDSS 31V40V
DMTH43M8LFGQ-13 MOSFET MOSFET BVDSS 31V-40V
DMTH43M8LPS-13 MOSFET BVDSS: 31V-40V POWERDI506
DMTH43M8LK3Q ブランドニューオリジナル
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