 |  | | |
| PartNumber | DMTH6010LK3-13 | DMTH6010LK3 | DMTH6010LK3Q |
| Description | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 41.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 2.6 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.29 mm | - | - |
| Length | 6.58 mm | - | - |
| Series | DMTH6010 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.1 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 9.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.3 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23.4 ns | - | - |
| Typical Turn On Delay Time | 5.7 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMTH6010LK3Q-13 | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 70A | |
| DMTH6010LK3-13 | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | ||
| DMTH6010LK3 | ブランドニューオリジナル | ||
| DMTH6010LK3-13 | Trans MOSFET N-CH 60V 14.8A Automotive 3-Pin(2+Tab) DPAK T/R | ||
| DMTH6010LK3Q | ブランドニューオリジナル | ||
| DMTH6010LK3Q-13 | Trans MOSFET N-CH 60V 14.8A Automotive 3-Pin(2+Tab) DPAK T/R |