DMTH6010LP

DMTH6010LPD-13 vs DMTH6010LPS-13 vs DMTH6010LPSQ-13

 
PartNumberDMTH6010LPD-13DMTH6010LPS-13DMTH6010LPSQ-13
DescriptionMOSFET MOSFET BVDSS: 41V-60VMOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pFMOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI5060-C-8PowerDI5060-8PowerDI5060-8
PackagingReelReelReel
SeriesDMTH6010DMTH6010DMTH6010
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.004092 oz0.003386 oz0.003386 oz
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Vds Drain Source Breakdown Voltage-60 V60 V
Id Continuous Drain Current-100 A13.5 A
Rds On Drain Source Resistance-8 mOhms6.4 mOhms
Vgs th Gate Source Threshold Voltage-3 V1 V
Vgs Gate Source Voltage-10 V20 V
Qg Gate Charge-41.3 nC41.3 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 175 C+ 175 C
Pd Power Dissipation-2.6 W136 W
Configuration-SingleSingle
Channel Mode-EnhancementEnhancement
Tradename-PowerDI-
Height-1 mm-
Length-5.8 mm-
Transistor Type-1 N-Channel1 N-Channel
Width-4.9 mm-
Fall Time-9.7 ns9.7 ns
Rise Time-4.3 ns4.3 ns
Typical Turn Off Delay Time-23.4 ns23.4 ns
Typical Turn On Delay Time-5.7 ns5.7 ns
Qualification--AEC-Q101
メーカー モデル 説明 RFQ
Diodes Incorporated
Diodes Incorporated
DMTH6010LPD-13 MOSFET MOSFET BVDSS: 41V-60V
DMTH6010LPS-13 MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF
DMTH6010LPSQ-13 MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 100A
DMTH6010LPD-13 Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI 5060 T/R
DMTH6010LPSQ-13 Trans MOSFET N-CH 60V 13.5A Automotive 8-Pin PowerDI 5060 T/R
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