DN1509N

DN1509N8-G vs DN1509N8 vs DN1509N8-G-CUT TAPE

 
PartNumberDN1509N8-GDN1509N8DN1509N8-G-CUT TAPE
DescriptionMOSFET MOSFET DEPLETION MODE 90V 6Transistor: N-MOSFET, unipolar, 90V, 0.3A, 1.6W, SOT89-3
ManufacturerMicrochip-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage90 V--
Id Continuous Drain Current360 mA--
Rds On Drain Source Resistance6 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.6 W--
ConfigurationSingleSingle Dual Drain-
Channel ModeDepletionDepletion-
PackagingReelReel-
Height1.6 mm--
Length4.6 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel1 N-Channel-
Width2.6 mm--
BrandMicrochip Technology--
Fall Time16 ns16 ns-
Product TypeMOSFET--
Rise Time16 ns16 ns-
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns15 ns-
Typical Turn On Delay Time12 ns12 ns-
Unit Weight0.001862 oz0.001862 oz-
Package Case-SOT-89-3-
Pd Power Dissipation-1.6 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-360 mA-
Vds Drain Source Breakdown Voltage-90 V-
Rds On Drain Source Resistance-6 Ohms-
メーカー モデル 説明 RFQ
Microchip Technology
Microchip Technology
DN1509N8-G MOSFET MOSFET DEPLETION MODE 90V 6
DN1509N8 Transistor: N-MOSFET, unipolar, 90V, 0.3A, 1.6W, SOT89-3
DN1509N8-G-CUT TAPE ブランドニューオリジナル
DN1509N8-G IGBT Transistors MOSFET MOSFET DEPLETION MODE 90V 6
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