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| PartNumber | DN2530N3-G | DN2530N3-G P002 | DN2530N3-G P003 |
| Description | MOSFET 300V 12Ohm | RF Bipolar Transistors MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 | RF Bipolar Transistors MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 |
| Manufacturer | Microchip | Microchip Technology | Microchip Technology |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 300 V | - | - |
| Id Continuous Drain Current | 175 mA | - | - |
| Rds On Drain Source Resistance | 12 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 740 mW | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Depletion | Depletion | Depletion |
| Packaging | Bulk | Reel | Reel |
| Height | 5.33 mm | - | - |
| Length | 5.21 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | FET | - | - |
| Width | 4.19 mm | - | - |
| Brand | Microchip Technology | - | - |
| Forward Transconductance Min | 300 mS | - | - |
| Fall Time | 20 ns | 20 ns | 20 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | 15 ns | 15 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | 15 ns | 15 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
| Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
| Package Case | - | TO-92-3 | TO-92-3 |
| Pd Power Dissipation | - | 740 mW | 740 mW |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 175 mA | 175 mA |
| Vds Drain Source Breakdown Voltage | - | 300 V | 300 V |
| Rds On Drain Source Resistance | - | 12 Ohms | 12 Ohms |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Microchip Technology |
DN2530N3-G | MOSFET 300V 12Ohm | |
| DN2530N3-G P013 | MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 | ||
| DN2530N3-G | MOSFET N-CH 300V 0.175A TO92-3 | ||
| DN2530N3-G P002 | RF Bipolar Transistors MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 | ||
| DN2530N3-G P013 | RF Bipolar Transistors MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 | ||
| DN2530N3-G P005 | RF Bipolar Transistors MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 | ||
| DN2530N3-G P003 | RF Bipolar Transistors MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 | ||
| DN2530N3-G P014 | RF Bipolar Transistors MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 |