 |  | | |
| PartNumber | EFC6602R-A-TR | EFC6602R-A | EFC6602R-A-TR-T |
| Description | MOSFET NCH+NCH 2.5V DRIVE SERIES | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | WLCSP-4 | - | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 5.9 mOhms | - | - |
| Packaging | Reel | Tape & Reel (TR) | - |
| Series | EFC6602R | EFC6602R | - |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.002413 oz | 0.002413 oz | - |
| Package Case | - | 6-XFBGA | - |
| Operating Temperature | - | 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 6-EFCP (2.7x1.81) | - |
| FET Type | - | 2 N-Channel (Dual) Common Drain | - |
| Power Max | - | 2W | - |
| Drain to Source Voltage Vdss | - | - | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate, 2.5V Drive | - |
| Current Continuous Drain Id 25°C | - | - | - |
| Rds On Max Id Vgs | - | - | - |
| Vgs th Max Id | - | - | - |
| Gate Charge Qg Vgs | - | 55nC @ 4.5V | - |
| Id Continuous Drain Current | - | 18 A | - |
| Vds Drain Source Breakdown Voltage | - | 12 V | - |
| Rds On Drain Source Resistance | - | 5.9 mOhms | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| EFC6602R-A-TR | MOSFET NCH+NCH 2.5V DRIVE SERIES | ||
| EFC6602R-A | ブランドニューオリジナル | ||
| EFC6602R-A-TR-T | ブランドニューオリジナル | ||
ON Semiconductor |
EFC6602R-A-TR | IGBT Transistors MOSFET NCH+NCH 2.5V DRIVE SERIES |