EMX1DXV6T1 stock, EMX1DXV6T1, EMX1DXV6T1G

EMX1DXV6T1G vs EMX1DXV6T1 vs EMX1DXV6T1/3XX


PartNumber	EMX1DXV6T1G	EMX1DXV6T1	EMX1DXV6T1/3XX
Description	Bipolar Transistors - BJT 100mA 60V Dual NPN	Bipolar Transistors - BJT 100mA 60V Dual NPN
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	N	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-563-6	SOT-563-6	-
Transistor Polarity	NPN	NPN	-
Configuration	Dual	Dual	-
Collector Emitter Voltage VCEO Max	50 V	50 V	-
Collector Base Voltage VCBO	60 V	60 V	-
Emitter Base Voltage VEBO	7 V	7 V	-
Collector Emitter Saturation Voltage	0.4 V	0.4 V	-
Maximum DC Collector Current	0.1 A	0.1 A	-
Gain Bandwidth Product fT	180 MHz	180 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	EMX1	-	-
Height	0.55 mm	0.55 mm	-
Length	1.6 mm	1.6 mm	-
Packaging	Reel	Reel	-
Width	1.2 mm	1.2 mm	-
Brand	ON Semiconductor	ON Semiconductor	-
Continuous Collector Current	0.1 A	0.1 A	-
DC Collector/Base Gain hfe Min	120	120	-
Pd Power Dissipation	357 mW	357 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	4000	-	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.000106 oz	0.000106 oz	-

Search Part Number : "EMX1DXV6T1", Match & Start with "EMX1DXV6T1" - Total : 5

メーカー	モデル	説明
	EMX1DXV6T1G	Bipolar Transistors - BJT 100mA 60V Dual NPN
	EMX1DXV6T1/3XX	ブランドニューオリジナル
ON Semiconductor	EMX1DXV6T1	Bipolar Transistors - BJT 100mA 60V Dual NPN
	EMX1DXV6T1G	Bipolar Transistors - BJT 100mA 60V Dual NPN
	EMX1DXV6T1	TRANS 2NPN 50V 0.1A SOT563