F4-50R12K

F4-50R12KS4 vs F4-50R12KS4_B11 vs F4-50R12KS4ENG

 
PartNumberF4-50R12KS4F4-50R12KS4_B11F4-50R12KS4ENG
DescriptionIGBT Modules N-CH 1.2KV 70AIGBT Modules IGBT Module 50A 1200V
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
ProductIGBT Silicon Modules--
ConfigurationQuad--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage3.75 V--
Continuous Collector Current at 25 C70 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation355 W--
Package / CaseEcono 2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTrayTray-
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesF450R12KS4BOSA1 SP000100431F450R12KS4B11BOSA1 SP000924500-
Unit Weight6.349313 oz--
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
F4-50R12KS4 IGBT Modules N-CH 1.2KV 70A
F4-50R12KS4_B11 IGBT Modules IGBT Module 50A 1200V
F4-50R12KS4ENG ブランドニューオリジナル
F4-50R12KS4_B11 IGBT Modules IGBT Module 50A 1200V
F4-50R12KS4 IGBT Modules N-CH 1.2KV 70A
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