FCH09

FCH099N60E vs FCH099N65S3-F155 vs FCH099N60

 
PartNumberFCH099N60EFCH099N65S3-F155FCH099N60
DescriptionMOSFET SuperFET2 600V Slow versionMOSFET SuperFET3 650V 99 mOhm, TO247 PKG
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current37 A--
Rds On Drain Source Resistance87 mOhms--
Vgs th Gate Source Threshold Voltage3.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge114 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation357 W--
Channel ModeEnhancement--
TradenameSuperFET II--
PackagingTube--
Height20.82 mm--
Length15.87 mm--
SeriesFCH099N60EFCH099N65S3-
Width4.82 mm--
BrandON Semiconductor / FairchildON Semiconductor-
Forward Transconductance Min31.4 S--
Fall Time22 ns--
Product TypeMOSFETMOSFET-
Rise Time23 ns--
Factory Pack Quantity450450-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time92 ns--
Typical Turn On Delay Time24 ns--
Unit Weight0.225401 oz--
メーカー モデル 説明 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCH099N60E MOSFET SuperFET2 600V Slow version
FCH099N65S3-F155 MOSFET SuperFET3 650V 99 mOhm, TO247 PKG
FCH099N60 ブランドニューオリジナル
ON Semiconductor
ON Semiconductor
FCH099N60E MOSFET N-CH 600V TO247
FCH099N65S3-F155 N-Channel SuperFET III MOSFET
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