 | | | |
| PartNumber | FDB3632 | FDB3632-F085 | FDB3652 |
| Description | MOSFET N-Channel PowerTrench | MOSFET 100V N-Channel PowerTrench MOSFET | MOSFET N-Channel PowerTrench |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 80 A | 80 A | 61 A |
| Rds On Drain Source Resistance | 7.5 mOhms | 7.5 mOhms | 14 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 310 W | 310 W | 150 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | PowerTrench | PowerTrench | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FDB3632 | FDB3632_F085 | FDB3652 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - | MOSFET |
| Width | 9.65 mm | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 46 ns | 46 ns | 45 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 39 ns | 39 ns | 85 ns |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 96 ns | 96 ns | 26 ns |
| Typical Turn On Delay Time | 30 ns | 30 ns | 12 ns |
| Part # Aliases | FDB3632_NL | FDB3632_F085 | FDB3652_NL |
| Unit Weight | 0.046296 oz | 0.046296 oz | 0.046296 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Qg Gate Charge | - | 84 nC | - |
| Qualification | - | AEC-Q101 | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB3682 | MOSFET 100V N-Channel Pwr Trench | |
| FDB3632 | MOSFET N-Channel PowerTrench | ||
| FDB3632-F085 | MOSFET 100V N-Channel PowerTrench MOSFET | ||
| FDB3672-F085 | MOSFET 100V 44A N-Channel PowerTrench | ||
| FDB3652-F085 | MOSFET N-Ch PowerTrench Trench Mos. | ||
| FDB3652 | MOSFET N-Channel PowerTrench | ||
| FDB3652_F085 | Darlington Transistors MOSFET N-Ch PowerTrench Trench Mos. | ||
| FDB3632-NL | ブランドニューオリジナル | ||
| FDB3632/ | ブランドニューオリジナル | ||
| FDB3632_F085 | N-CHANNEL POWERTRENCH MOSFET | ||
| FDB3652-NL | ブランドニューオリジナル | ||
| FDB3672-NL | ブランドニューオリジナル | ||
| FDB3672_F085 | N-CHANNEL POWERTRENCH MOSFET | ||
| FDB3682-NL | ブランドニューオリジナル | ||
| FDB3632-CUT TAPE | ブランドニューオリジナル | ||
| FDB3652-CUT TAPE | ブランドニューオリジナル | ||
| FDB3652SB82059 | ブランドニューオリジナル | ||
| FDB3652_Q | MOSFET N-Channel PowerTrench | ||
ON Semiconductor |
FDB3652 | MOSFET N-CH 100V 61A TO-263AB | |
| FDB3632 | MOSFET N-CH 100V 80A D2PAK | ||
| FDB3632-F085 | MOSFET N-CH 100V 12A D2PAK | ||
| FDB3652-F085 | MOSFET N-CH 100V 61A D2PAK | ||
| FDB3672 | MOSFET N-CH 100V 44A D2PAK | ||
| FDB3672-F085 | MOSFET N-CH 100V 44A D2PAK | ||
| FDB3682 | MOSFET N-CH 100V 6A TO-263AB | ||
| FDB3632_SB82115 | INTEGRATED CIRCUIT |