FDB816 stock, FDB816, FDB8160-F085


PartNumber	FDB8160-F085	FDB8160_F085	FDB8160
Description	MOSFET 30V N-Channel PowerTrench MOSFET	IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET	MOSFET N-CH 30V 80A D2PAK
Manufacturer	ON Semiconductor	Fairchild Semiconductor	-
Product Category	MOSFET	Transistors - FETs, MOSFETs - Single	-
RoHS	Y	-	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	TO-263-3	-	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	30 V	-	-
Id Continuous Drain Current	80 A	-	-
Rds On Drain Source Resistance	1.5 mOhms	-	-
Vgs th Gate Source Threshold Voltage	2.9 V	-	-
Vgs Gate Source Voltage	20 V	-	-
Qg Gate Charge	187 nC	-	-
Pd Power Dissipation	254 W	-	-
Configuration	Single	-	-
Tradename	PowerTrench	-	-
Packaging	Reel	Reel	-
Height	4.83 mm	-	-
Length	10.67 mm	-	-
Series	FDB8160_F085	-	-
Transistor Type	1 N-Channel	1 N-Channel	-
Width	9.65 mm	-	-
Brand	ON Semiconductor / Fairchild	-	-
Fall Time	27 ns	27 ns	-
Product Type	MOSFET	-	-
Rise Time	18.9 ns	18.9 ns	-
Factory Pack Quantity	800	-	-
Subcategory	MOSFETs	-	-
Part # Aliases	FDB8160_F085	-	-
Unit Weight	0.046296 oz	0.046296 oz	-
Package Case	-	TO-252-3	-
Pd Power Dissipation	-	254 W	-
Vgs Gate Source Voltage	-	20 V	-
Id Continuous Drain Current	-	80 A	-
Vds Drain Source Breakdown Voltage	-	30 V	-
Vgs th Gate Source Threshold Voltage	-	2.9 V	-
Rds On Drain Source Resistance	-	1.5 mOhms	-
Qg Gate Charge	-	187 nC	-

Search Part Number : "FDB816", Match & Start with "FDB816" - Total : 4

メーカー	モデル	説明
ON Semiconductor / Fairchild	FDB8160-F085	MOSFET 30V N-Channel PowerTrench MOSFET
	FDB8160_F085	IGBT Transistors MOSFET 30V N-Channel PowerTrench MOSFET
ON Semiconductor	FDB8160	MOSFET N-CH 30V 80A D2PAK
ON Semiconductor	FDB8160-F085	MOSFET N-CH 30V 80A D2PAK

FDB816