 |  | | |
| PartNumber | FGL60N100BNTDTU | FGL60N100BNTDT | FGL60N100BNTDTU,G60N100B |
| Description | IGBT Transistors HIGH POWER | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-264-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1000 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 25 V | - | - |
| Continuous Collector Current at 25 C | 60 A | - | - |
| Pd Power Dissipation | 180 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | FGL60N100BNTD | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 60 A | - | - |
| Height | 26 mm | - | - |
| Length | 20 mm | - | - |
| Width | 5 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 60 A | - | - |
| Gate Emitter Leakage Current | +/- 500 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 375 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FGL60N100BNTDTU_NL | - | - |
| Unit Weight | 0.238311 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGL60N100BNTDTU | IGBT Transistors HIGH POWER | |
ON Semiconductor |
FGL60N100BNTDTU | IGBT Transistors HIGH POWER | |
| FGL60N100BNTDT | ブランドニューオリジナル | ||
| FGL60N100BNTDTU,G60N100B | ブランドニューオリジナル |