 |  | | |
| PartNumber | FQB10N50CFTM-WS | FQB10N50C | FQB10N50CFTM |
| Description | MOSFET 500V 10A N-Channel | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 610 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 45 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 143 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQB10N50CFTM | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 55 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 47 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 138 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Part # Aliases | FQB10N50CFTM_WS | - | - |
| Unit Weight | 0.046296 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB10N50CFTM-WS | MOSFET 500V 10A N-Channel | |
| FQB10N50C | ブランドニューオリジナル | ||
| FQB10N50CFTM | ブランドニューオリジナル | ||
| FQB10N50CFTM_WS | IGBT Transistors MOSFET 500V 10A N-Channel | ||
ON Semiconductor |
FQB10N50CFTM-WS | MOSFET N-CH 500V 10A DPAK |