 |  | | |
| PartNumber | FQB30N06LTM | FQB30N06 | FQB30N06L |
| Description | MOSFET 60V N-Channel QFET Logic Level | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 32 A | - | - |
| Rds On Drain Source Resistance | 35 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 3.75 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQB30N06L | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 24 S | - | - |
| Fall Time | 110 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 210 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Unit Weight | 0.046296 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB30N06LTM | MOSFET 60V N-Channel QFET Logic Level | |
| FQB30N06TM | MOSFET 60V N-Channel QFET Logic Level | ||
| FQB30N06 | ブランドニューオリジナル | ||
| FQB30N06L | ブランドニューオリジナル | ||
| FQB30N06LTM-NL | ブランドニューオリジナル | ||
| FQB30N06TM-FQB30N06 | ブランドニューオリジナル | ||
| FQB30N06TM-NL | ブランドニューオリジナル | ||
| FQB30N06LT | ブランドニューオリジナル | ||
| FQB30N06T | ブランドニューオリジナル | ||
ON Semiconductor |
FQB30N06LTM | MOSFET N-CH 60V 32A D2PAK | |
| FQB30N06TM | MOSFET N-CH 60V 30A D2PAK |