FQB50N06

FQB50N06LTM vs FQB50N06 vs FQB50N06L

 
PartNumberFQB50N06LTMFQB50N06FQB50N06L
DescriptionMOSFET 60V N-Channel QFET Logic LevelMOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.022ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage VMOSFET N-CHANNEL 60V 52.4A D2PAK, PK
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current52.4 A--
Rds On Drain Source Resistance21 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFQB50N06L--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min40 S--
Fall Time145 ns--
Product TypeMOSFET--
Rise Time380 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time80 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.046296 oz--
メーカー モデル 説明 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB50N06LTM MOSFET 60V N-Channel QFET Logic Level
FQB50N06TM MOSFET 60V N-Channel QFET
FQB50N06 MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.022ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage V
FQB50N06L MOSFET N-CHANNEL 60V 52.4A D2PAK, PK
FQB50N06LTM-NL ブランドニューオリジナル
FQB50N06M ブランドニューオリジナル
FQB50N06T ブランドニューオリジナル
FQB50N06TM-NL ブランドニューオリジナル
ON Semiconductor
ON Semiconductor
FQB50N06TM MOSFET N-CH 60V 50A D2PAK
FQB50N06LTM MOSFET N-CH 60V 52.4A D2PAK
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