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| PartNumber | FQD18N20V2TM | FQD18N20V2TF | FQD18N20V2 |
| Description | MOSFET 200V N-Ch adv QFET V2 Series | MOSFET 200V N-Ch adv QFET V2 Series | MOSFET, N, D-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:15A, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.14ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vg |
| Manufacturer | ON Semiconductor | ON Semiconductor | FSC |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | E | - |
| Technology | Si | Si | MOSFET (Metal Oxide) |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 15 A | 15 A | - |
| Rds On Drain Source Resistance | 140 mOhms | 140 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | 2.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Tape & Reel (TR) |
| Height | 2.39 mm | 2.39 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Series | FQD18N20V2 | - | QFET |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Forward Transconductance Min | 11 S | 11 S | - |
| Fall Time | 62 ns | 62 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 133 ns | 133 ns | - |
| Factory Pack Quantity | 2500 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 38 ns | 38 ns | - |
| Typical Turn On Delay Time | 16 ns | 16 ns | - |
| Unit Weight | 0.009184 oz | 0.139332 oz | - |
| Part # Aliases | - | FQD18N20V2TF_NL | - |
| Part Status | - | - | Obsolete |
| FET Type | - | - | N-Channel |
| Drain to Source Voltage (Vdss) | - | - | 200V |
| Current Continuous Drain (Id) @ 25°C | - | - | 15A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 10V |
| Vgs(th) (Max) @ Id | - | - | 5V @ 250A |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 26nC @ 10V |
| Vgs (Max) | - | - | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 1080pF @ 25V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 2.5W (Ta), 83W (Tc) |
| Rds On (Max) @ Id, Vgs | - | - | 140 mOhm @ 7.5A, 10V |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | D-Pak |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD18N20V2TM | MOSFET 200V N-Ch adv QFET V2 Series | |
| FQD18N20V2TF | MOSFET 200V N-Ch adv QFET V2 Series | ||
| FQD18N20V2 | MOSFET, N, D-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:15A, Drain Source Voltage Vds:200V, On Resistance Rds(on):0.14ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vg | ||
ON Semiconductor |
FQD18N20V2TF | MOSFET N-CH 200V 15A DPAK | |
| FQD18N20V2TM | MOSFET N-CH 200V 15A DPAK | ||
| FQD18N20V2TF-NL | ブランドニューオリジナル | ||
| FQD18N20V2TM-NL | ブランドニューオリジナル | ||
| FQD18N20V2TM-CUT TAPE | ブランドニューオリジナル |