| PartNumber | FQI27N25TU | FQI27N25TU-F085 | FQI2N80TU |
| Description | MOSFET 250V N-Channel QFET | MOSFET 250V 0.11OHM 25.5A N-CH MOSFET | MOSFET 800V N-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | 250 V | 800 V |
| Id Continuous Drain Current | 25.5 A | 25.5 A | 2.4 A |
| Rds On Drain Source Resistance | 110 mOhms | 110 Ohms | 4.9 Ohms |
| Vgs Gate Source Voltage | 30 V | - | 30 V |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 3.13 W | - | 3.13 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Tube | - | Tube |
| Height | 7.88 mm | 7.88 mm | 7.88 mm |
| Length | 10.29 mm | 10.29 mm | 10.29 mm |
| Series | FQI27N25 | FQI27N25TU_F085 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - | MOSFET |
| Width | 4.83 mm | 4.83 mm | 4.83 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 24 S | - | 2.4 S |
| Fall Time | 120 ns | - | 28 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 270 ns | - | 30 ns |
| Factory Pack Quantity | 1000 | 400 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 80 ns | - | 25 ns |
| Typical Turn On Delay Time | 32 ns | - | 12 ns |
| Part # Aliases | FQI27N25TU_NL | FQI27N25TU_F085 | - |
| Unit Weight | 0.073511 oz | 0.073511 oz | 0.084199 oz |
| Qualification | - | AEC-Q101 | - |
| Tradename | - | UltraFET QFET | - |