| PartNumber | FQP30N06L | FQP30N06 |
| Description | MOSFET 60V N-Channel QFET Logic Level | MOSFET 60V N-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 32 A | 30 A |
| Rds On Drain Source Resistance | 27 mOhms | 40 mOhms |
| Vgs Gate Source Voltage | 20 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 79 W | 79 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | QFET | QFET |
| Packaging | Tube | Tube |
| Height | 16.3 mm | 16.3 mm |
| Length | 10.67 mm | 10.67 mm |
| Series | FQP30N06L | FQP30N06 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET |
| Width | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 24 S | 16 S |
| Fall Time | 110 ns | 40 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 210 ns | 85 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 35 ns |
| Typical Turn On Delay Time | 15 ns | 10 ns |
| Part # Aliases | FQP30N06L_NL | FQP30N06_NL |
| Unit Weight | 0.063493 oz | 0.063493 oz |