FQPF8N80C stock, FQPF8N80C, FQPF8N80C


PartNumber	FQPF8N80C	FQPF8N80CYDTU
Description	MOSFET 800V N-Ch Q-FET advance C-Series	MOSFET HIGH VOLTAGE
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	MOSFET	MOSFET
RoHS	E	E
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-220FP-3	TO-220-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	800 V	800 V
Id Continuous Drain Current	8 A	8 A
Rds On Drain Source Resistance	1.55 Ohms	1.55 Ohms
Vgs Gate Source Voltage	30 V	30 V
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	59 W	59 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	QFET	-
Packaging	Tube	Tube
Height	16.07 mm	16.3 mm
Length	10.36 mm	10.67 mm
Series	FQPF8N80C	FQPF8N80C
Transistor Type	1 N-Channel	1 N-Channel
Type	MOSFET	-
Width	4.9 mm	4.7 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Forward Transconductance Min	5.6 S	-
Fall Time	70 ns	70 ns
Product Type	MOSFET	MOSFET
Rise Time	110 ns	110 ns
Factory Pack Quantity	1000	800
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	65 ns	65 ns
Typical Turn On Delay Time	40 ns	40 ns
Part # Aliases	FQPF8N80C_NL	-
Unit Weight	0.080072 oz	0.090478 oz

Search Part Number : "FQPF8N80C", Match & Start with "FQPF8N80C" - Total : 10

メーカー	モデル	説明
ON Semiconductor / Fairchild	FQPF8N80C	MOSFET 800V N-Ch Q-FET advance C-Series
ON Semiconductor / Fairchild	FQPF8N80CYDTU	MOSFET HIGH VOLTAGE
ON Semiconductor	FQPF8N80C	MOSFET N-CH 800V 8A TO-220F
ON Semiconductor	FQPF8N80CYDTU	MOSFET N-CH 800V 8A TO-220F
	FQPF8N80C,8N80C	ブランドニューオリジナル
	FQPF8N80C,8N80C,	ブランドニューオリジナル
	FQPF8N80C,FQP8N80C,8N80C	ブランドニューオリジナル
	FQPF8N80C,FQPF7N80C	ブランドニューオリジナル
	FQPF8N80C/SL8N80F	ブランドニューオリジナル
	FQPF8N80C--	ブランドニューオリジナル

FQPF8N80C