GA20S

GA20SICP12-263 vs GA20SICP12 vs GA20SICP12-247

 
PartNumberGA20SICP12-263GA20SICP12GA20SICP12-247
DescriptionMOSFET 1200V 45A SIC CoPak
ManufacturerGeneSiC SemiconductorGeneSiC Semiconductor-
Product CategoryMOSFETPower Drivers - Modules-
RoHSY--
TechnologySiCSiC-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-7--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1.2 kV--
Id Continuous Drain Current45 A--
Rds On Drain Source Resistance50 mOhms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge100 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation282 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height4.597 mm--
Length10.668 mm--
SeriesGA20SICP12GA20SICP12-
TypeTransistor/Schottky Diode Co-Pack--
Width9.169 mm--
BrandGeneSiC Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.056438 oz0.056438 oz-
Package Case-TO-263-3, D2Pak (2 Leads + Tab), TO-263AB-
Current-20A-
Voltage-1200V-
Voltage Isolation---
Pd Power Dissipation-282 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-45 A-
Vds Drain Source Breakdown Voltage-1.2 kV-
Rds On Drain Source Resistance-50 mOhms-
Qg Gate Charge-100 nC-
メーカー モデル 説明 RFQ
GeneSiC Semiconductor
GeneSiC Semiconductor
GA20SICP12-263 MOSFET 1200V 45A SIC CoPak
GA20SICP12-247 ブランドニューオリジナル
GA20SICP12-263 Trans JFET N-CH 1200V 20A SiC 4-Pin(3+Tab) TO-263
GA20SICP12 ブランドニューオリジナル
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