 |  |  | |
| PartNumber | HGTG12N60A4D | HGTG12N60A4 | HGTG12N60A4D 12N60A4D |
| Description | IGBT Transistors 600V N-Channel IGBT SMPS Series | IGBT 600V 54A 167W TO247 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 54 A | - | - |
| Pd Power Dissipation | 167 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGTG12N60A4D | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 54 A | - | - |
| Height | 20.82 mm | - | - |
| Length | 15.87 mm | - | - |
| Width | 4.82 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 60 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGTG12N60A4D_NL | - | - |
| Unit Weight | 0.225401 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTG12N60A4D | IGBT Transistors 600V N-Channel IGBT SMPS Series | |
ON Semiconductor |
HGTG12N60A4 | IGBT 600V 54A 167W TO247 | |
| HGTG12N60A4D | IGBT 600V 54A 167W TO247 | ||
| HGTG12N60A4D 12N60A4D | ブランドニューオリジナル | ||
| HGTG12N60A4D,12N60A4D,12 | ブランドニューオリジナル | ||
| HGTG12N60A4D,HGTG10N120B | ブランドニューオリジナル | ||
| HGTG12N60A4D,HGTG10N120BND, | ブランドニューオリジナル | ||
| HGTG12N60A4D-NL | ブランドニューオリジナル | ||
| HGTG12N60A4_NL | ブランドニューオリジナル |