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| PartNumber | HMC-ALH445-SX | HMC-ALH445 |
| Description | RF Amplifier GaAs HEMT WBand lo Noise amp, 18-40 GHz | RF Amplifier GaAs HEMT WBand lo Noise amp, 18-40 GHz |
| Manufacturer | NXP | Analog Devices Inc. |
| Product Category | RF Amplifier | RF Amplifier |
| RoHS | Y | Y |
| Packaging | Reel | Gel Pack |
| Brand | NXP Semiconductors | Analog Devices / Hittite |
| Product Type | RF Amplifier | RF Amplifier |
| Factory Pack Quantity | 5000 | 50 |
| Subcategory | Wireless & RF Integrated Circuits | Wireless & RF Integrated Circuits |
| Part # Aliases | 934068534115 | - |
| Unit Weight | 0.000026 oz | 0.000106 oz |
| Mounting Style | - | SMD/SMT |
| Type | - | RF Amplifier |
| Technology | - | GaAs |
| Operating Frequency | - | 18 GHz |
| P1dB Compression Point | - | 16 dBm |
| Gain | - | 19 dB |
| Operating Supply Voltage | - | 3.5 V |
| NF Noise Figure | - | 1.6 dB |
| OIP3 Third Order Intercept | - | 27 dBm |
| Operating Supply Current | - | 90 mA |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 85 C |
| Series | - | HMC903G |
| Frequency Range | - | 6 GHz to 18 GHz |
| Number of Channels | - | 1 Channel |
| Input Return Loss | - | 11 dB |
| Pd Power Dissipation | - | 0.62 W |