 | | | |
| PartNumber | IDP20E65D2XKSA1 | IDP20E65D2 | IDP20E65D2XKSA1 , 2SC5079 |
| Description | Diodes - General Purpose, Power, Switching IGBT PRODUCTS | ||
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | Diodes - General Purpose, Power, Switching | Diodes, Rectifiers - Single | - |
| RoHS | Y | - | - |
| Package / Case | TO-220-2 | - | - |
| Packaging | Tube | Tube | - |
| Brand | Infineon Technologies | - | - |
| Product Type | Diodes - General Purpose, Power, Switching | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | Diodes & Rectifiers | - | - |
| Part # Aliases | IDP20E65D2 SP001170100 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Series | - | - | - |
| Package Case | - | TO-220-2 | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | PG-TO220-2-1 | - |
| Speed | - | Fast Recovery = 200mA (Io) | - |
| Diode Type | - | Standard | - |
| Current Reverse Leakage Vr | - | 40μA @ 650V | - |
| Voltage Forward Vf Max If | - | 2.2V @ 20A | - |
| Voltage DC Reverse Vr Max | - | 650V | - |
| Current Average Rectified Io | - | 40A (DC) | - |
| Reverse Recovery Time trr | - | 32ns | - |
| Capacitance Vr F | - | - | - |
| Operating Temperature Junction | - | -40°C ~ 175°C | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IDP20E65D2XKSA1 | Diodes - General Purpose, Power, Switching IGBT PRODUCTS | |
| IDP20E65D2XKSA1 | DIODE GEN PURP 650V 40A TO220-2 | ||
| IDP20E65D2 | ブランドニューオリジナル | ||
| IDP20E65D2XKSA1 , 2SC5079 | ブランドニューオリジナル |