IGP30N60

IGP30N60H3 vs IGP30N60 vs IGP30N60H3 G30H603

 
PartNumberIGP30N60H3IGP30N60IGP30N60H3 G30H603
DescriptionIGBT Transistors 600V 30A 187W
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.95 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation187 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
SeriesHighSpeed 3--
PackagingTube--
Operating Temperature Range- 40 C to + 175 C--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity500--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIGP30N60H3XKSA1 IGP3N6H3XK SP000702546--
Unit Weight0.211644 oz--
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IGP30N60H3 IGBT Transistors 600V 30A 187W
IGP30N60H3XKSA1 IGBT 600V 60A 187W TO220-3
Infineon Technologies
Infineon Technologies
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